000 | 00486nam a2200193Ia 4500 | ||
---|---|---|---|
008 | 201231s9999 xx 000 0 und d | ||
020 | _a9781420066852 | ||
082 | _a621.381528 CRE | ||
100 | _aCRESSLER D | ||
245 | 0 | _aSIGE AND SI STRAINED-LAYER EPITAXY FOR SILICON HETEROSTRUCTURE DEVICES | |
250 | _a1 ST | ||
260 | _bCRC PRESS TAYLOR & FRANCIS GROUP | ||
260 | _c2008 | ||
300 | _a520 P | ||
365 | _b6918 | ||
650 | _aELECTRONICS | ||
700 | _aJOHN | ||
942 | _cREF | ||
999 |
_c74346 _d74346 |