000 00486nam a2200193Ia 4500
008 201231s9999 xx 000 0 und d
020 _a9781420066852
082 _a621.381528 CRE
100 _aCRESSLER D
245 0 _aSIGE AND SI STRAINED-LAYER EPITAXY FOR SILICON HETEROSTRUCTURE DEVICES
250 _a1 ST
260 _bCRC PRESS TAYLOR & FRANCIS GROUP
260 _c2008
300 _a520 P
365 _b6918
650 _aELECTRONICS
700 _aJOHN
942 _cREF
999 _c74346
_d74346